Affiliation: | a School of Electronic and Electrical Engineering, Kyungpook National University, Taegu, 702-701 South Korea b Korea Research Institute of Standards and Science, P.O. Box 102, Yusong, Taejon, 305-600 South Korea |
Abstract: | A 1 μm thick undoped GaAs buffer layer, a 1500 Å thick n-type GaAs layer, an undoped 500 Å thick AlAs layer and a 50 Å thick GaAs cap layer were consecutively grown by molecular beam epitaxy (MBE) on a [100] oriented semi-insulating GaAs substrate. The AlAs layer was oxidized in a N2 bubbled H2O vapor ambient at 400°C for 3 h and fully converted to Al2O3 for use as a gate insulator. The I–V characteristics, having a maximum drain current of 10.6 mA, a current cut-off voltage of −4.5 V and a maximum transconductance value of 11.25 mS/mm, indicate that the selective wet thermal oxidation of AlAs/GaAs was successful in producing a depletion mode GaAs MOSFET. |