CMOS SRAM单粒子翻转效应的解析分析

分析了影响ＣＭＯＳＳＲＡＭ单粒子翻转效应的时间因素，指出不能仅根据临界电荷来判断发生单粒子翻转效应与否，必须考虑器件的恢复时间、反馈时间和电荷收集过程．给出了恢复时间和反馈时间的计算方法，提出了器件抗单粒子翻转的加固措施．对电荷收集过程中截止管漏极电位的变化进行了分析，提出了临界电荷新定义，并给出了判断带电粒子入射能否导致器件发生单粒子翻转效应的方法

Analysis of Single Event Upset in CMOS SRAMs

The time factor in Single Event Upset (SEU) in CMOS SRAMs is analyzed. It is not appropriate only according to the critical charge to determine whether a SEU occurs in a SRAM. The recovery time, the feedback time and charge collection process must be considered. The formulas to calculate the recovery time and the feedback time are presented and some methods to harden CMOS SRAMs against SEU are proposed. The drain potential of the off\|MOSFET is analyzed during the charge collection. A new definition of the critical charge for CMOS SRAM is suggested. A way to determine whether an ion can induce SEU in SRAM is presented.