High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayer

Individual single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with a 2 nm thick silane-based organic self-assembled monolayer (SAM) gate dielectric have been manufactured. The FETs exhibit a unique combination of excellent device performance parameters. In particular, they operate with a gate-source voltage of only -1 V and exhibit good saturation, large transconductance, and small hysteresis (