| 一种高精度BiCMOS电流模带隙基准源 |
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| 引用本文： | 李沛林,杨建红.一种高精度BiCMOS电流模带隙基准源[J].现代电子技术,2010,33(16):202-204,210. |
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| 作者姓名： | 李沛林 杨建红 |
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| 作者单位： | 兰州大学物理科学与技术学院,微电子与固体电子学研究所,甘肃,兰州,730000 |
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| 摘 要： | 采用Xfab0.35μmBiCMOS工艺设计了一种高电源抑制比（PSRR）、低温漂、输出0.5V的带隙基准源电路。该设计中,电路采用新型电流模带隙基准,解决了传统电流模带隙基准的第三简并态的问题,且实现了较低的基准电压;增加了修调电路,实现了基准电压的微调。利用Cadence软件对其进行仿真验证,其结果显示,当温度在-40～＋120℃范围内变化时,输出基准电压的温度系数为15ppm/℃;电源电压在2～4V范围内变化时,基准电压摆动小于0.06mV;低频下具有-102.6dB的PSRR,40kHz前电源抑制比仍小于-100dB。
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| 关 键 词： | 电流模带隙基准 基准电压修调 电源电压抑制比 温度系数 |
Realization of High-precision BiCMOS Current-mode Bandgap Reference Voltage Source |
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| LI Pei-lin,YANG Jian-hong.Realization of High-precision BiCMOS Current-mode Bandgap Reference Voltage Source[J].Modern Electronic Technique,2010,33(16):202-204,210. |
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| Authors: | LI Pei-lin YANG Jian-hong |
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| Affiliation: | (Institute of Microelectronics,School of Physical Science and technology,Lanzhou University,Lanzhou 730000,China) |
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| Abstract: | A high performance bandgap reference circuit with 0.5 V output voltage,high power supply rejection ratio（PSRR）and low temperature coefficient was designed by the aid of Xfab 0.35 μm BiCMOS model.A novel BiCMOS bandgap reference is adopted in the design,which solves the third-equilibrium state problem existing in the traditional current-mode bandgap reference voltage circuit.An accuracy tuning current is proposed to implement the fine adjustments to the output voltage.The simulation verification was carried out with Cadence Spectre.The results show that the temperature coefficient of the output reference voltage is 15 ppm/℃ in the temperature range of-40～125 ℃,the voltage swing is less than 0.06 mV at 2～4 V power supply voltage,the PSRR is-102.6 dB at low frequency,and the PSRR is still less then-100 dB while the frequency is less then 40 kHz. |
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| Keywords: | current-mode bandgap reference reference voltage correction power supply rejection ratio temperature coefficient |
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