生长温度对PLD原位生长SrTiO3薄膜结构与非线性介电性能的影响

采用脉冲激光沉积法 ( PLD ) 制备的Y1B2Cu3O7-x薄膜作为叉指底电极,然后生长 SrTiO3介质薄膜,形成叉指型压控电容结构。通过对 SrTiO3薄膜的原位生长温度与薄膜微观结构及非线性介电性能之间的关系研究,发现随生长温度的升高薄膜晶粒逐步增大然后变小,薄膜的介电常数可调率和本征介电损耗随晶粒大小的增大而增加,而非本征损耗则随晶粒取向的增加而减小。

The effects of growth temperature on microstructure and nonlinear dielectric properties of PLD as-grown SrTiO3 thin films

A new structure of electric bias tunable interdigital capacitor, which SrTiO_3 thin films deposited on top of the Y_1B_2Cu_3O_(7-x) interdigital electrode, was prepared using pulsed laser deposition. The relation between growth temperature, microstructure and nonlinear dielectric property of as-deposited SrTiO_3 thin films were researched. The grain size of as-deposited SrTiO_3 thin films first increased and then decreased as the growth temperature increased. The larger the grain size of the SrTiO_3 thin films, the higher the dielectric constant tunability and intrinsic dielectric loss; the better the grain oriented, the lower the extrinsic dielectric loss.