|
|||||
|
|
Simulation of damage induced by ion implantation in Lithium Niobate |
|
| Authors: | M. Bianconi G.G. Bentini M. Chiarini P. De Nicola G.B. Montanari A. Menin A. Nubile S. Sugliani |
| Affiliation: | a Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi (CNR - IMM), Via P. Gobetti 101, I-40129 Bologna, Italy b Laboratorio di Micro e Submicro Tecnologie abilitanti dell’Emilia-Romagna (MIST.E-R), Via P. Gobetti 101, I-40129 Bologna, Italy c Carlo Gavazzi Space S.p.A. - Sede di Bologna, Via P. Gobetti 101, I-40129 Bologna, Italy d Università di Bologna - Dipartimento DEIS, Viale del Risorgimento 2, I-40136 Bologna, Italy |
| Abstract: | A simulation tool has been developed to engineer the damage formation in Lithium Niobate by ion irradiation with any atomic number and energy. Both nuclear and electronic processes were considered and, in particular, the dependence on the ion velocity of the electronic excitation damage efficiency has been taken into account. By using this tool it is possible both to draw damage nomograms, useful to qualitatively foresee the result of a given process, and to perform reliable simulations of the defect depth profiles, as demonstrated by the good agreement with the experimental data available in the literature. |
| Keywords: | Ion implantation Lithium Niobate Defect engineering |
| 本文献已被 ScienceDirect 等数据库收录！ | |