The effects of the annealing time on helium implantation in Si |
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Authors: | BS Li CH Zhang HH Zhang YT Yang LH Zhou LQ Zhang Y Zhang |
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Affiliation: | Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China |
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Abstract: | The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. |
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Keywords: | Surface morphology Atomic force microscopy Transmission electron microscopy Implantation |
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