Study of defects in implanted silica glass by depth profiling Positron Annihilation Spectroscopy |
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Authors: | R.S. Brusa,S. Mariazzi,P. Mazzoldi,W. Egger,B. Lö we,C. Macchi |
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Affiliation: | a CNISM, Dipartimento di Fisica, Università di Trento, Via Sommarive 14, I-38050 Povo, Trento, Italy b CNISM, Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy c Institut für Angewandte Physik und Messtechnik, Universität der Bunderswehr München, 85577 Neubiberg, Germany d Physik Department E21 and FRMII, Technische Universität München, 85747 Garching, Germany e IFIMAT, UNCentro and CICPBA, Pinto 399, B7000GHG Tandil, Argentina |
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Abstract: | Positron Annihilation Spectroscopy (PAS) performed with continuous and pulsed positron beams allows to characterize the size of the intrinsic nano-voids in silica glass, their in depth modification after ion implantation and their decoration by implanted ions. Three complementary PAS techniques, lifetime spectroscopy (LS), Doppler broadening spectroscopy (DBS) and coincidence Doppler broadening spectroscopy (CDBS) will be illustrated by presenting, as a case study, measurements obtained on virgin and gold implanted silica glass. |
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Keywords: | Silica glass Positronium Positrons Ion implantation |
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