Total ionizing dose effects in high voltage devices for flash memory |
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Authors: | Zhangli Liu Zhiyuan Hu Zhengxuan Zhang Hua Shao Ming Chen Dawei Bi Bingxu Ning Ru Wang Shichang Zou |
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Affiliation: | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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Abstract: | The effect of size and substrate bias conditions after irradiation on the total ionizing dose response of high voltage devices for flash memory has been investigated. Different sensitivity of transistors with different gate width was observed, which is well known as the radiation induced narrow channel effect. A charge sharing model was used to explain this effect. The negative substrate bias voltage after irradiation showed considerable impact on the parasitic transistor’s response by suppressing leakage current. |
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Keywords: | Oxide trapped charge RINCE Shallow trench isolation TID |
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