| High Purity and Large-scale Preparation of β-Ga2O3 Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics |
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| 作者姓名： | YU Zhou YANG Zhi-mei CHEN Hao WU Zhan-wen JIN Yong JIAO Zhi-feng HE Yi WANG Hui LIU Jun-gang GONG Min SUN Xiao-song |
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| 作者单位： | [1]Department of Materials Science [2]Key Lab of Microelectronics and Technology [3]Analytical and Testing Center, Sichuan University, Chengdu 610064, CHN [4]Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN |
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| 摘 要： | Ga2O3 nano-structures, nanowires and nanosheets are produced on Au pre coated（111） silicon substrates with chemical vapor deposition（CVD） technique. By evaporating pure Ga powder in the H2O atmosphere under ambient pressure the large-scale preparation of β-Ga2O3 with monoclinic crystalline structure is achieved. The crystalline structures and morphologies of produced Ga2O3 nano-structures are characterized by means of scanning electron microscope（SEM）, X-ray diffraction（XRD）, selected area electron diffraction （SAED） and transmission electron microscope（TEM）. Raman spectrum reveals the typical vibration modes of Ga2O3 The vibration mode shifts corresponding to Ga2O3 nano-structures are not found. Two distinguish photoluminescence（PL） emissions are found at about 399 nm and 469 nm owing to the VO-VGa excitation and VO-VGaO excitation, respectively. The growth mechanisms of Ga2O3 nanowires and nanosheets are discussed with vapor liquid-solid（VLS） and vapor-solid（VS） mechanisms.
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| 关 键 词： | β-Ga2O3纳米线 β-Ga2O3纳米片 大规模制造 CVD技术 喇曼光谱 光致发光特性 |
| 文章编号： | 1007-0206（2007）02-0155-06 |
| 收稿时间： | 2006-09-28 |
| 修稿时间： | 2007-04-15 |
High Purity and Large-scale Preparation ofβ-Ga2O3Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics |
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| YU Zhou YANG Zhi-mei CHEN Hao WU Zhan-wen JIN Yong JIAO Zhi-feng HE Yi WANG Hui LIU Jun-gang GONG Min SUN Xiao-song.High Purity and Large-scale Preparation ofβ-Ga2O3Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics[J].Semiconductor Photonics and Technology,2007,13(2):155-160. |
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| Authors: | YU Zhou YANG Zhi-mei CHEN Hao WU Zhan-wen JIN Yong JIAO Zhi-feng HE Yi WANG Hui LIU Jun-gang GONG Min SUN Xiao-song |
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| Abstract: | Ga2O3 nano-structures, nanowires and nanosheets are produced on Au pre-coated(111) silicon substrates with chemical vapor deposition(CVD) technique. By evaporating pure Ga powder in the H-O atmosphere under ambient pressure the large-scale preparation ofβ-Ga2O3with monoclinic crystalline structure is achieved. The crystalline structures and morphologies of produced Ga2O3nano-structures are characterized by means of scanning electron microscope(SEM), X-ray diffraction(XRD), selected area electron diffraction (SAED) and transmission electron microscope(TEM). Raman spectrum reveals the typical vibration modes of Ga2O3. The vibration mode shifts corresponding to Ga2O3nano-structures are not found. Two distinguish photoluminescence(PL) emissions are found at about 399 nm and 469 nm owing to the VO2VGaexcitation and VO2VGa2Oexcitation, respectively. The growth mechanisms of Ga2O3nanowires and nanosheets are discussed with vapor-liquid-solid(VLS) and vapor-solid(VS) mechanisms. |
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| Keywords: | β-Ga2O3 nanowires nanosheets Raman and photoluminescence |
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