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Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures |
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| Authors: | M. Kocan G.A. Umana-Membreno M.R. Kilburn I.R. Fletcher F. Recht L. McCarthy U.K. Mishra B.D. Nener G. Parish |
| Affiliation: | (1) School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley, WA, 6009, Australia;(2) Centre for Microscopy, Characterisation and Analysis, The University of Western Australia, 35 Stirling Hwy, Crawley, WA, 6009, Australia;(3) Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA |
| Abstract: | This paper reports results of scanning ion probe studies of silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted regions become wider with increasing depth in the structure. These results may explain the previously reported existence of resistance associated with the transition region between implanted and non-implanted semiconductor regions in AlGaN/GaN HEMT heterostructures with non-alloyed Si-implanted source and drain ohmic contact regions. |
| Keywords: | Aluminium gallium AlGaN/GaN ion implantation HEMT ohmic contacts contact resistance nanoSIMS |
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