| 快速退火对钛酸铋薄膜微结构和铁电性的影响 |
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| 引用本文： | 苏学军,李岩. 快速退火对钛酸铋薄膜微结构和铁电性的影响[J]. 半导体技术, 2002, 27(7): 13-17. DOI: 10.3969/j.issn.1003-353X.2002.07.006 |
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| 作者姓名： | 苏学军 李岩 |
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| 作者单位： | 海军航空工程学院 |
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| 摘 要： | 采用MOCVD与快速退火工艺,制备高度择优取向的Bi4Ti3O12铁电薄膜.运用x射线衍射术分析薄膜材料的结构,x射线显微分析仪测量薄膜材料的组分,并通过电滞回线的测量,研究快速退火对Bi4Ti 3O12薄膜结构和铁电性的影响.
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| 关 键 词： | MOCVD XRD 快速退火 铁电薄膜 |
| 文章编号： | 1003-353X(2002)07-0013-05 |
| 修稿时间： | 2001-08-27 |
Effects of rat processing on the microstructure and ferroelectricity of Bi4Ti3O12thin films |
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| SU Xue-jun,LI Yan. Effects of rat processing on the microstructure and ferroelectricity of Bi4Ti3O12thin films[J]. Semiconductor Technology, 2002, 27(7): 13-17. DOI: 10.3969/j.issn.1003-353X.2002.07.006 |
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| Authors: | SU Xue-jun LI Yan |
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| Affiliation: | SU Xue-jun1,LI Yan2 |
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| Abstract: | In this paper, MOCVD and RAT methods were utilized to fabricate the Bi4Ti3O12thinfilms on Si(100) substrate. The morphology and phase structure evolution of the films were ana-lyzed by using the XRD and SEM techniques. The hysteretic loop of the thin films was measuredsystematically. The annealing time has great effects on the film densification, the combination ofgrain boundary and ferroelectrics properties of BTO thin films. |
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| Keywords: | MOCVD XRD RAT ferroelectrics thin films |
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