| 碳化硅与氧化铝界面化学稳定性研究 |
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| 引用本文： | 潘颐,益小苏. 碳化硅与氧化铝界面化学稳定性研究[J]. 复合材料学报, 2002, 19(4): 61-68 |
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| 作者姓名： | 潘颐 益小苏 |
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| 作者单位： | 1. 浙江大学,材料与化工学院,杭州,310027
2. 北京航空材料研究院,先进复合材料国防科技重点实验室,北京,100095 |
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| 基金项目： | 国家自然科学基金项目 (5 9672 0 3 1)，浙江省自然科学基金 (5 970 0 6)，先进复合材料国防科技重点实验室基金 |
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| 摘 要： | 借助最新最权威基本的热力学数据,按化学平衡理论,分析SiC和Al2O3之间可能发生的化学反应,定量计算SiC中不同C活度、不同固相产物活度,不同温度下SiC和Al2O3间诸反应各气相产物分压和分压总和,精确分析SiC和Al2O3界面的热力学稳定性,提供一个大气压惰性气体环境SiC和Al2O3界面的热力学失稳判据,为SiC材料研究者提供可靠的参考资料。
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| 关 键 词： | 碳化硅 氧化铝 界面热力学 化学稳定性 |
| 文章编号： | 1000-3851(2002)04-0061-08 |
| 收稿时间： | 2000-11-28 |
| 修稿时间： | 2000-11-28 |
THERMODYNAMIC ANALYSIS OF THE CHEMICAL STABILITY OF SILICON CARBIDE AND ALUMINA INTERFACE |
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| PAN Yi,YI Xiao-su. THERMODYNAMIC ANALYSIS OF THE CHEMICAL STABILITY OF SILICON CARBIDE AND ALUMINA INTERFACE[J]. Acta Materiae Compositae Sinica, 2002, 19(4): 61-68 |
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| Authors: | PAN Yi YI Xiao-su |
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| Affiliation: | 1. Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;2. National Key Laboratory of Advanced Composites, Beijing Institute of Aeronautical Materials, Beijing 100095, China |
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| Abstract: | Based on the most updated and authorized thermodynamic data, the reactions between SiC and Al 2O 3 have be studied using the equilibrium theory of chemical reactions. The partial pressure of each gaseous product of the reactions is quantitatively analyzed by taking into accounts the carbon activity in SiC and unit and reduced activities of solid reaction products. The chemical stability of SiC Al 2O 3 interface under an inert ambient of 1 atmosphere has been judged. The criterion used in the judgement is that the total pressure of all gaseous products is over 1 atmosphere. The quantitative results are provided as reliable references for materials research. |
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| Keywords: | silicon carbide alumina interface thermodynamics chemical stability |
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