MOVPE production reactors for high temperature electronics

For the fabrication of epitaxial films of silicon carbide or the Group III nitrides, high growth temperatures (up to 1700°C) and fast heating and cooling of the growth environment have been found to be necessary. A range of production systems meeting these requirements has been designed with different loading capacities. In this paper, we present results from various machines showing the high quality and excellent homogeneity obtainable for 3C-SiC on Si and on 6H-SiC, as well as GaN on sapphire.