Si/a-Si:H heterojunction microwave bipolar transistors with cut-offfrequencies ft above 5 GHz |
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Abstract: | The fabrication of a silicon heterojunction microwave bipolar transistor with an n+ a-Si:H emitter is discussed, and experimental results are given. The device provides a base sheet resistance of 2 kΩ/□ a base width 0.1 μm, a maximum current gain of 21 (VCE=6 V, Ic=15 mA), and an emitter Gummel number G E of about 1.4×1014 Scm-4. From the measured S parameters, a cutoff frequency ft of 5.5 GHz and maximum oscillating frequency fmax of 7.5 GHz at VCE=10 V, Ic=10 mA are obtained |
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