Successively pulse plated cadmium selenide films and their photoelectrochemical behaviour

In successive pulse plating, the pulse deposition is repeated after a definite duration of plating preceded by a mild cleaning of the electrode and with a fresh deposition bath for the same duration. In this study, CdSe films were deposited on Ti substrates by successive pulse plating from a bath containing CdSO₄ and SeO₂ at a current density of 80 mA cm⁻² and a duty cycle of 3·3% for a duration of 30 min. The films heat-treated to 550°C for 20 min in argon atmosphere, were polycrystalline with a hexagonal structure. At an illumination of 60 mW cm⁻², a conversion efficiency of 4·5% for the photoetched film and 1·7% for the chemically etched one were determined.