注F MOSFET漏电流的辐照和退火行为

分析研究了不同偏置辐照和退火条件下，Ｐ沟和Ｎ沟ＭＯＳＦＥＴ的漏电流变化特性。结果表明，ＰＭＯＳＦＥＴ的辐射感生漏电流与栅偏压的依赖关系类似于辐照陷阱电荷的栅偏压关系；注ＦＰＭＯＳＦＥＴ的辐射感生漏电流增长小于未注Ｆ样品；ＮＭＯＳＦＥＴ辐照后漏电流随时间的退火呈现下降、重新增长和趋于饱和的特征，注Ｆ对退人过程中漏电流的重新增长有一定的抑制作用。

The Irradiation and Annealing Behaviors of Leakage Current in Fluorine-Implanted MOSFETs

The effects of irradiation gate bias and annealing on the leakage current in P and N channel MOSFETs have been investigated. The radiation inducedleakage current in PMOSFET is dependent on the irradiation gate biases. Inflourine-implanted samples, the increasing of leakage current with radiation does issmaller than that in ones without F. The post irradiation annealing of leakage current in NMOSFET behaves decreasing, re-increasing and toward saturating withtime. The re-increasing Of leakage current during annealing has been restrained dueto fluorine implantation into oxides.