“一步法”合成NiCo_2S_4纳米阵列高性能能量存储器件电极的研究

通过简单的"一步低温原位合成"法成功制备出了以泡沫镍为基底的具有自支撑结构的分层三维网络的NiCo_2S_4纳米阵列,采用SEM、XRD对产物的微观结构进行表征,并对其进行电化学性能测试。结果表明,由于这种独特的分层网络结构,该NiCo_2S_4纳米阵列不仅能够为能量存储提供大量的电化学活性位点,而且拥有良好的电子传递性能,NiCo_2S_4@泡沫镍电极在20 m A/cm~2的电流密度下,面积比电容可达到10.15 F/cm~2,且当电流密度增大到100 m A/cm~2时,面积电容仍然为7.29 F/cm~2,显示出优异的电容保持率;当NiCo_2S_4负载量是14.8 mg时,电流密度为20 m A/cm~2,充放电5 000次,电容保持率是72.5%,显示出NiCo_2S_4@泡沫镍电极良好的循环稳定性。

Research on" One-step" Synthesis of NiCo2S4 Nanoarray Electrode for High-performance Energy Storage Device

By one-step in situ synthesis at low temperature,NiCo2 S4 nanoarray,hierarchical three-dimensional network structured and with the nickel foam as base,was obtained.The product was characterized by SEM amd XRD,and its electrochemical properties were investigated.The results showed that due to the unique layered network structure,the NiCo2S4 nanoarray could not only provide a large number of electrochemical active sites,but had good electron transfer capacity.The area specific capacitance of the electrochemical properties of NiCo2S4@foam nickel electrode could reach 10.15 F/cm2 when the current density was 20 mA/cm2,and when the current density increased to 100 mA/cm2,the area specific capacitance was 7.29 F/cm2,showing excellent capacitance retention;when the load of NiCo2S4 was 14.8 mg,the current density was 20 mA/cm2,and the electrode was charged and discharged for 5 000 times,the capacitance retention rate was 72.5％,demonstrating good cycling stability of the NiCo2 S4@foam nickel electrode.