| pH-ISFET温度特性分析及其温度补偿方法的研究 |
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| 引用本文： | 王贵华,虞惇,王跃林.pH-ISFET温度特性分析及其温度补偿方法的研究[J].半导体学报,1988,9(3):235-243. |
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| 作者姓名： | 王贵华 虞惇 王跃林 |
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| 作者单位： | 哈尔滨工业大学 哈尔滨
(王贵华,虞惇),哈尔滨工业大学 哈尔滨(王跃林) |
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| 摘 要： | 本文分析了pH-ISFET测量系统的温度特性,推导了器件输出电压的温漂表达式,提出了“零温度系数工作点”的新概念和“零温度系数调整法”.研究表明,“零温度系数调整法”与“差分对管补偿法”均可使器件的温漂降低1—2个数量级.
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| 关 键 词： | 离子敏感器 化学敏感器 温度特性 温度补偿 |
Analysis of pH-ISFET Temperature Characteristics and Temperature Compensation Approaches |
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| Wang Guihua/Harbin Institute of Technology,HarbinYu Dun/Harbin Institute of Technology,HarbinWang Yaolin/Harbin Institute of Technology,Harbin.Analysis of pH-ISFET Temperature Characteristics and Temperature Compensation Approaches[J].Chinese Journal of Semiconductors,1988,9(3):235-243. |
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| Authors: | Wang Guihua/Harbin Institute of Technology HarbinYu Dun/Harbin Institute of Technology HarbinWang Yaolin/Harbin Institute of Technology Harbin |
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| Abstract: | The temperature characteristics of a pH-ISFET testing circuit are analysed and the ex-pression of the device temperature drift is given. A new concept "Zero T. C. operatingpoint" and a method "Zero T. C. adjustment" have been proposed. Experimental data showthat both "Zero T. C. adjustment" and "Differential compensation configuration of transistorpair" can effectively reduce the temperature drift of the output voltage to 1-2 orders less thanthe original one. |
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| Keywords: | Chemical sensor Ion sensor Temperature characteristics Temperature compensation |
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