| 汞膜电极阳极溶出伏安法测定痕量锗的研究 |
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| 引用本文： | 代岚. 汞膜电极阳极溶出伏安法测定痕量锗的研究[J]. 当代化工, 2003, 32(1): 56-59 |
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| 作者姓名： | 代岚 |
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| 作者单位： | 沈阳师范大学职业技术学院,辽宁,沈阳,110036 |
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| 摘 要： | 提出了一种以铂基汞膜电极阳极溶出伏安法测定痕量锗的方法,发现在pH 7的酒 石酸缓冲溶液中于-1.20 V和-0.50 V左右出现两个溶出峰。锗的浓度在0.01～1 mg/L范围内 与第一个峰(-1.20 V)有良好的线性关系,检出下限为1×10-9。
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| 关 键 词： | 阳极溶出伏安法 痕量 锗 汞膜电极 测定 |
| 文章编号： | 1671-0460(2003)01-056-03 |
| 修稿时间： | 2002-11-19 |
Study on the Determination of Trace Germanium by Mercury Film Electrode Anodic Stripping Voltammetry |
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| DAI Lan. Study on the Determination of Trace Germanium by Mercury Film Electrode Anodic Stripping Voltammetry[J]. Contemporary Chemical Industry, 2003, 32(1): 56-59 |
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| Authors: | DAI Lan |
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| Abstract: | This paper presents a method for determination of trace germanium by pktinum based mercury film electrode anodic stripping voltammetry. Results show that there are two stripping peaks occured in tartaric acid buffer solution (pH 7) between -1.2V and - 0.5 V. Germanium concentration has a good linear relation to the first peak( -1.2V) in the concentration range from 0.01 to 1 mg/L. The detected lower limit is equal to 1 ppb. |
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| Keywords: | Anodic stripping method Trace Germanium |
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