Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation |
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Authors: | Tomoya Konishi Shiro Tsukamoto |
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Affiliation: | (1) Anan National College of Technology, Anan Tokushima, 774-0017, Japan |
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Abstract: | Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ
scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM
image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The
distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains
were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are
related to the surface reconstruction domains. |
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Keywords: | InAs Wetting layer Quantum dot Surface reconstruction Spatial point pattern |
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