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Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(1 0 0) by modeling and simulation |
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| Authors: | Devki N Talwar Z C Feng |
| Affiliation: | a Department of Physics, Indiana University of Pennsylvania, 975 Oakland Avenue, Indiana, PA 15705-1087, USA b Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei 106, Taiwan, ROC |
| Abstract: | New phonon-assisted defect features are observed using photoluminescence (PL) and Raman scattering spectroscopy on 3C-SiC/Si(1 0 0) films grown by chemical vapor deposition (CVD) technique. The ultraviolet excitation room-temperature (RT) PL-Raman spectra show a luminescence band near 2.3 eV due to RT recombination over the 3C-SiC indirect band gap. In addition to the strong Raman lines characteristic of Si substrate and 3C-SiC we also observed weaker impurity modes near 620, 743 and 833 cm−1. These frequencies are compared with the results of Green's function simulations of impurity modes with plausible defect structures to best support the observed Raman features as well as modes of some prototypical defect center. |
| Keywords: | 3C-SiC Raman scattering Green function Simulation |
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