Properties of Mn-doped p-type InxGa1-xAsyP1-y grown by liquid-phase epitaxy

Epitaxial layers of p-type In_xGa_1-xAs_yP_1-y doped with Mn were grown by liquid-phase epitaxy on (111)-B oriented InP substrates at a growth temperature of 635°C. The doping characteristics and electrical and luminescent properties were studied and compared with those in Zn-doped epilayers. The distribution coefficient of Mn was about 0.1–0.3. The p-type epilayers with hole concentration of up to 3 × 10¹⁸ cm^?3 could be easily obtained by Mn doping. The activation energy of the Mn acceptor was about 40 meV. Mn doping yielded a broad photoluminescent emission spectrum which probably arises from d-shell interaction of the Mn as well as strong phonon coupling. From electron beam-induced current measurements in p-n heterojunctions utilizing Mn, a value of L_n = 2 μm was obtained for the minority carrier diffusion length of electrons in the p-type region.