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A re-extrapolation technique in Newton-SOR computer simulation of semiconductor devices
Authors:Cheng T. Wang
Affiliation:Department of Electrical Engineering, University of Missouri—Columbia/Kansas City, 600 W. Mechanic, Independence, MO 64050, U.S.A.
Abstract:A novel extrapolation technique which learns from the failure of previous linear extrapolation result and subsequently changes the extrapolation scale accordingly is found to be very useful in dealing with the divergence problem in Newton-Successive Over Relaxation (SOR) computer simulation of semiconductor devices. The algorithm and an example are described in this paper.
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