Oxidation of glow discharge a-Si:H |
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| Authors: | JP Ponpon B Bourdon |
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| Affiliation: | Groupe de Physique et Applications des Semiconducteurs, Centre de Recherches Nucléaires, 67037 Strasbourg, France;Laboratoires de Marcoussis, CGE 91440 Marcoussis, France |
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| Abstract: | The optical constants of glow discharge hydrogenated amorphous silicon have been determined by ellipsometry measurements. From their evolution during exposure to air the growth of the oxide layer on amorphous silicon at room temperature has been evaluated. |
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