High-voltage planar junction with a field-limiting ring |
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| Authors: | Seiji Yasuda Toshio Yonezawa |
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| Affiliation: | Transistor Works, Semiconductor Division, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, Japan |
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| Abstract: | A twodimensional Poisson equation is solved as part of a program to improve breakdown characteristics of a planar p-n junction by using a field limiting ring. The influences of n? concentration and n? layer width of p+-n?-n+ diode are investigated. Higher n? concentration and smaller n? width make optimum distance between anode and field limiting ring smaller. Breakdown voltages predicted by optimising method reported agree well with the experimental results. |
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