Threshold voltage models of short,narrow and small geometry MOSFET's: A review

As MOS devices are shrunk to near and submicrometer dimensions, short channel, narrow width and small geometry effects cause variations in the threshold voltage. It is critical for circuit and device designers to be able to predict these variations. This paper reviews and compares the various modeling techniques developed to determine the threshold voltage as a function of device geometry. It is hoped this review will provide insights for the development of new models for today's small devices.