PdInP Schottky diode hydrogen sensors |
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| Authors: | M Yousuf B Kuliyev B Lalevic TL Poteat |
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| Affiliation: | Department of Electrical Engineering College of Engineering Rutgers University P.O. Box 909 Piscataway, NJ 08854 U.S.A.;Bell Tel. Laboratories, Murray Hill, NJ 07974, U.S.A. |
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| Abstract: | PdInP Schottky diodes are shown to be very sensitive and reproducible detectors of hydrogen. Absorption or desorption of hydrogen by Pd causes large changes in the diode C–V or I–V characteristics. Fourfold increase in capacitance is observed on exposing the device to forming gas. We present data on sensitivity of these devices, their transient response and detection mechanism. |
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