Minority carrier diffusion length in LPE InxGa1−xP: N layers (x < 0.01)

Minority carrier diffusion length In_xGa_1?xP LPE layers has been measured using the electron beam method. It has been found that this parameter significantly changes with the composition of the alloy. The measured relationship proves that minority carrier mobility in In_xGa_1?xP alloys with low indium content strongly depends on the alloy composition. It is suggested that alloy scattering may be responsible for this behaviour. The effect of doping the In_xGa_1?xP LPE layers with nitrogen has also been investigated. Results indicate that carrier mobility drops when the nitrogen concentration exceeds certain limits and this most probably can be ascribed to carrier scattering on the nitrogen centers.