Thin film polycrystalline Si p-n junction solar cells with preferential doping

A model has been introduced for a polycrystalline thin film silicon p-n junction solar cell with preferential doping along the grain boundaries. Detailed numerical calculations have been done for the effect of doping depths along the grain boundaries, for different grain sizes, on the performance of the cell under AM1 conditions. The results indicate that preferential doping of grain boundaries leads to significant improvement of the cell performance.