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Reduction of solar cell efficiency by edge defects across the back-surface-field junction:— A developed perimeter model
Authors:C.T. Sah  K.A. Yamakawa  R. Lutwack
Affiliation:Department of Electrical Engineering, University of Illinois, 1406 West Green Street, Urbana, IL 61801, U.S.A.;Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA 91109, U.S.A.
Abstract:Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.
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