Resistance calculation of a cylindrical semiconductor with continuously variable conductivity along its axis covered by circular electrodes

In this paper we present a new method of resistance calculation of a cylindrical semiconductor, few bases of which are covered by circular electrodes of different areas. On the semiconductor base provided with the smaller circular electrode an improved boundary condition is applied. The potential variation in the semiconductor is determined by an exact solution of the continuity equation by matching cylindrical periodic functions in the space domain on the semiconductor—electrode boundary supposing that the conductivity of the electrode is finite. Three types of conductivity profiles are considered. The conductivity of the cylindrical semiconductor along its axis is either constant, or varies linearly or exponentially. The results presented in the paper can be applied in the design, measurement and manufacture of semiconductor components having the shape of a cylinder.