Calculation of the electric field enhancement for a degenerate diffusion process |
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Authors: | Alan H. Marshak Ritu Shrivastava |
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Affiliation: | Electrical Engineering Department, Louisiana State University, Baton Rouge, LA 70803, U.S.A.;Memory Products Division II, MS 736, Mostek Corporation, Carrollton, TX 75006, U.S.A. |
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Abstract: | The internal electric field produced by a constant source impurity diffusion is calculated using Fermi-Dirac statistics for the majority carrier. Numerical results indicate that treating the material as if it were nondegenerate always produces an underestimate in the electric field. The field enhancement factor which gives the ratio of the effective diffusion coefficient to the impurity diffusion coefficient valid for a degenerate diffusion process is clarified. |
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