| 基于插入WO3缓冲层并五苯有机场效应晶体管性能的研究 |
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| 引用本文： | 樊建锋,程晓曼,白潇,郑灵程,蒋晶,吴峰. 基于插入WO3缓冲层并五苯有机场效应晶体管性能的研究[J]. 半导体学报, 2014, 35(6): 064004-4 |
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| 作者姓名： | 樊建锋 程晓曼 白潇 郑灵程 蒋晶 吴峰 |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Nos. 61076065, 11204214）. |
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| 摘 要： | The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/（V.s） and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer.
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| 关 键 词： | 有机场效应晶体管 性能增强 缓冲层 苯系 过渡金属氧化物 场效应迁移率 器件性能 三氧化钨 |
Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer |
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| Fan Jianfeng,Cheng Xiaoman,Bai Xiao,Zheng Lingcheng,Jiang Jing and Wu Feng. Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer[J]. Chinese Journal of Semiconductors, 2014, 35(6): 064004-4 |
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| Authors: | Fan Jianfeng Cheng Xiaoman Bai Xiao Zheng Lingcheng Jiang Jing Wu Feng |
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| Affiliation: | School of Science, Tianjin University of Technology, Tianjin 300384, China;School of Science, Tianjin University of Technology, Tianjin 300384, China;Institute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin key Laboratory of Photoelectric Materials and Device, Tianjin 300384, China;School of Science, Tianjin University of Technology, Tianjin 300384, China;School of Science, Tianjin University of Technology, Tianjin 300384, China;School of Science, Tianjin University of Technology, Tianjin 300384, China;School of Science, Tianjin University of Technology, Tianjin 300384, China |
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| Abstract: | The pentacene-based organic field effect transistor (OFET) with a thin transition metal oxide (WO3) layer between pentacene and metal (Al) source/drain electrodes was fabricated. Compared with conventional OFET with only metal Al source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 cm2/(V·s) and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer. |
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| Keywords: | organic field effect transistors contact resistance WO3 buffer layer |
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