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TiO2 薄膜CMP表面粗糙度的研究
引用本文:段波,周建伟,刘玉岭,王辰伟,张玉峰.TiO2 薄膜CMP表面粗糙度的研究[J].半导体学报,2014,35(6):063003-4.
作者姓名:段波  周建伟  刘玉岭  王辰伟  张玉峰
基金项目:河北省自然科学基金(E2013202247);河北省科技计划项目 (Z2010112 ,10213936) ;河北省教育厅基金(2011128)
摘    要:Abstract: Surface roughness by peaks and depressions on the surface of titanium dioxide (TiO2) thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing (CMP) is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness (1.16 A, the scanned area was 10 × 10 μm2) and a higher polishing rate (60.8 nm/min), the optimal parameters were: pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.

关 键 词:化学机械抛光  TiO2薄膜  表面粗糙度  光学系统  工作压力  抗反射涂层  二氧化钛  消光系数

Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film
Duan Bo,Zhou Jianwei,Liu Yuling,Wang Chenwei and Zhang Yufeng.Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film[J].Chinese Journal of Semiconductors,2014,35(6):063003-4.
Authors:Duan Bo  Zhou Jianwei  Liu Yuling  Wang Chenwei and Zhang Yufeng
Affiliation:Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
Abstract:TiO2 thin film surface roughness CMP process parameters
Keywords:TiO2 thin film  surface roughness  CMP  process parameters
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