| 基于手机应用的集成无源器件滤波器的线性180纳米绝缘体硅天线开关模组 |
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| 引用本文： | 崔杰,陈磊,赵鹏,牛旭,刘轶. 基于手机应用的集成无源器件滤波器的线性180纳米绝缘体硅天线开关模组[J]. 半导体学报, 2014, 35(6): 065005-5 |
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| 作者姓名： | 崔杰 陈磊 赵鹏 牛旭 刘轶 |
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| 基金项目： | 上海“创新行动计划”院市合作项目;国家自然科学基金 |
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| 摘 要： | A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive devices （IPD） technology, which is developed for cellular applications. The antenna switch module （ASM） features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.
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| 关 键 词： | CMOS技术 天线开关 应用模块 无源器件 SOI 线性 集成 筛选器 |
| 修稿时间： | 2014-01-03 |
A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications |
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| Cui Jie,Chen Lei,Zhao Peng,Niu Xu and Liu Yi. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications[J]. Chinese Journal of Semiconductors, 2014, 35(6): 065005-5 |
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| Authors: | Cui Jie Chen Lei Zhao Peng Niu Xu Liu Yi |
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| Affiliation: | Micro-nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Micro-nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;Shanghai Raiser Electronics, Shanghai 201210, China;Shanghai Raiser Electronics, Shanghai 201210, China;Micro-nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China |
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| Abstract: | A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. |
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| Keywords: | antenna switch module (ASM) integrated passive devices (IPD) single pole eight throw (SP8T) thin film silicon-on-insulator (SOI) |
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