无螺旋电感的小面积SiGe HBT宽带低噪声放大器

设计了一款无螺旋电感的1~6 GHz频段的小面积高性能SiGe HBT宽带低噪声放大器(wideband low noise amplifier,WLNA).采用具有优良阻抗匹配特性的共基放大器作为输入级,并采用噪声抵消技术抵消其噪声达到输入噪声匹配;共射放大器作为输出级,有源电感替代螺旋电感实现电感峰化技术来扩展频带宽度、提高增益的平坦度.基于Jazz 0.35μm SiGe BiCMOS工艺,完成了版图设计,WLNA的版图尺寸仅为105μm×115μm,与使用螺旋电感的WLNA相比,芯片面积大大减小.利用安捷伦公司的射频/微波集成电路仿真工具ADS进行了验证.结果表明:该WLNA在1~6 GHz频段内,S₂₁>16 dB,NF<3.5 dB,S₁₁<-10 dB,S₂₂<-10 dB.对于设计应用于射频前端的小面积、低成本、高性能的单片WLNA具有一定的指导意义.

Small Area SiGe HBT Wideband Low Noise Amplifier Without Spiral Inductor

A 1- 6 GHz inductorless SiGe HBT wideband low noise amplifier( WLNA) with small die area and high performance was presented. The input stage was common-based amplifier with superior input impedance matching,and the noise of the common-base amplifier was cancelled by using noise cancellation technology. Common-emitter amplifier was used at the output stage. The active inductor instead of spiral inductor enabled shunt peaking for extending the bandwidth and improving gain flatness.Based on Jazz 0. 35 μm SiGe BiCMOS technology,the layout were designed. The layout occupied the die area of only 105 μm × 115 μm,and the total die area of the amplifier was much smaller than that of the amplifier with spiral inductor. With Agilent RF /MW integrated circuits simulation tools,the results show that the proposed WLNA exhibits S21> 16 dB,NF < 3. 5 dB,S11<- 10 dB,and S22<- 10 dB in the frequency range of 1- 6 GHz. The results provide an important guide to design and develop the monolithic WLNA with small die area,low-cost and high performance for radio frequency( RF) frontend.