CVD金刚石的成核机理研究

运用热丝CVD技术在单晶硅片上沉积金刚石膜,金刚石微晶将优先在基片表面缺陷处生长。经研磨粗糙的硅基材表面上金刚石的晶粒密度,要比未经任何处理的光滑硅表面上的大得多。利用扫描电镜、电镜能谱、超高压透射电镜、电子衍射等分析技术检测样品,在金刚石膜/硅界面处检测到了微晶碳化硅。本文认为,CVD金刚石在硅基材上的成核,取决于金刚石与硅基片材料间形成化学键的难度,能成键才能成核。

Nucleation of CVD Diamiond

In the process of deposition of diamond film on the monocrystalline silicon plate by the hot-filament CVD method, diamond microcrystallines will grow preferably along the defects on the surface of silicon matrix and the density of micro crystallines is much greater than those on the untreated smooth surface. The micro cry stallines SiC was detected in the in- terface between diamond film and silicon substrate by micro electron probe, HUTEM and elec- tron diffraction. It is proposed that, in CVD, nucleation of diamond microcrystallines depends on the possibility of chemical bond formation bewteen carbon and silicon substrate materials.