Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applications |
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| Authors: | Alain E Kaloyeros Aiguo Feng Jonathan Garhart Kenneth C Brooks Sumanta K Ghosh Arjun N Saxena Fred Luehrs |
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| Affiliation: | (1) Department of Physics, State University of New York at Albany, 12222 Albany, New York;(2) Department of Chemistry, University of Illinois at Urbana-Champaign, 61801 Urbana, Illinois;(3) Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180 Troy, NY;(4) Jordan Valley Applied Radiation, Inc., 44039 North Ridgeville, OH |
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| Abstract: | Copper films for potential use in multilevel metallization in ULSIC’s were produced by low temperature (250–350° C) metal-organic
chemical vapor deposition (LTMOCVD) in atmospheres of pure H2 or mixture Ar/H2 from the β-diketonate precursor bis(1,1,1,5,5,5-hexafluoroacetylacetonato) copper(ll), Cu(hfa)2. The films were analyzed by x-ray diffraction (XRD), Rutherford backscattering (RBS), Auger electron spectroscopy (AES),
scanning electron microscopy (SEM), and energy-dispersive x-ray spectroscopy (EDXS). The results of these studies showed that
the films were uniform, continuous, adherent and highly pure—oxygen and carbon contents were below the detection limits of
AES. Four point resistivity measurements showed that the copper films had very low resistivity, as low as 1.9 μΩcm for the
films deposited in pure hydrogen atmosphere. Our preliminary results seem to indicate that LTMOCVD is a very attractive technique
for copper multilevel metallizations. |
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| Keywords: | LTMOCVD Cu films metallization |
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