| 实现组件PID合格的工艺研究 |
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| 引用本文： | 李吉,魏红军,严金梅,张进臣,王尚鑫. 实现组件PID合格的工艺研究[J]. 电源技术, 2017, 41(5). DOI: 10.3969/j.issn.1002-087X.2017.05.034 |
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| 作者姓名： | 李吉 魏红军 严金梅 张进臣 王尚鑫 |
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| 作者单位： | 晶澳太阳能有限公司,河北邢台,055550 |
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| 摘 要： | 主要研究了用在管式PECVD沉积SiO_2-Si_3N_4叠层钝化膜对电池片效率及组件PID的影响。叠层钝化膜可以通过管式PECVD工艺一次性完成。沉积SiO_2-Si_3N_4叠层膜与常规Si_3N_4膜进行对比,电池片效率可以提升0.07%,其中短路电流和开路电压提升明显。沉积SiO_2-Si_3N_4叠层膜电池的组件可以实现PID合格。
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| 关 键 词： | 管式PECVD SiO2/Si3N4叠层膜 PID |
Research on qualified process of component PID |
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| LI Ji,WEI Hong-jun,YAN Jin-mei,ZHANG Jin-chen,WANG Shang-xin. Research on qualified process of component PID[J]. Chinese Journal of Power Sources, 2017, 41(5). DOI: 10.3969/j.issn.1002-087X.2017.05.034 |
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| Authors: | LI Ji WEI Hong-jun YAN Jin-mei ZHANG Jin-chen WANG Shang-xin |
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| Abstract: | The effect of SiO2-Si3N4 passivation film deposited by tubular PECVD on the cell efficiency and the component PID was studied.The laminated passivation film can be completed by tubular PECVD.Compared with the conventional Si3N4 film,the efficiency of the SiO2-Si3N4 film increases by 0.07％,and the Isc and Voc are improved obviously.The components of the SiO2-Si3N4 laminated membrane cell can reach PID qualification. |
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| Keywords: | tubular PECVD SiO2-Si3N4 film PID |
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