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Superconductivity in polycrystalline diamond thin films
Authors:Yoshihiko Takano   Masanori Nagao   Tomohiro Takenouchi   Hitoshi Umezawa   Isao Sakaguchi   Masashi Tachiki  Hiroshi Kawarada
Affiliation:aNational Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 Japan;bSchool of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;cAdvanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba 305-8568, Japan
Abstract:Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. The superconducting transition temperatures are determined to be 8.7 K for Tc onset and 5.0 K for zero resistance by transport measurements. And the upper critical field is estimated to be around 7 T.
Keywords:Boron-doped diamond   Superconductivity   Semiconductivity   (111) orientation   Metal-insulator transition
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