Magnetism in SiC implanted with high doses of Fe and Mn |
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| Authors: | S J Pearton K P Lee M E Overberg C R Abernathy N Theodoropoulou A F Hebard R G Wilson S N G Chu J M Zavada |
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| Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL;(2) Department of Physics, University of Florida, USA;(3) Stevenson Ranch, 93181, CA;(4) Agere Systems, 07974 Murray Hill, NJ;(5) Army Research Office, 27709 Research Triangle Park, NC |
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| Abstract: | High concentrations (0.1–5 at.%) of Mn or Fe were introduced into the near-surface region (≤2000 Å) of 6H-SiC substrates by direct implantation at ～300°C. After annealing at temperatures up to 1000°C, the structural properties were examined by transmission electron microscopy (TEM) and selected-area diffraction pattern (SADP) analysis. The magnetic properties were examined by SQUID magnetometry. While the Mn-implanted samples were paramagnetic over the entire dose range investigated, the Fe-implanted material displayed a ferromagnetic contribution present at <175 K for the highest dose conditions. No secondary phases were detected, at least not to the sensitivity of TEM or SADP. |
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| Keywords: | 6H-SiC ion implantation dilute-magnetic semiconductor |
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