| 一种采用带-带隧穿热电子注入编程的新型快闪存贮器 |
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| 引用本文： | 潘立阳,朱钧,刘志宏,曾莹,鲁勇. 一种采用带-带隧穿热电子注入编程的新型快闪存贮器[J]. 半导体学报, 2002, 23(7): 690-694. DOI: 10.3969/j.issn.1674-4926.2002.07.004 |
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| 作者姓名： | 潘立阳 朱钧 刘志宏 曾莹 鲁勇 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084 |
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| 基金项目： | 国家科技攻关项目;97-760-01-01; |
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| 摘 要： | 提出一种采用带-带隧穿热电子注入编程的新型快闪存贮器结构,在便携式低功耗的code闪存中有着广泛的应用前景.该结构采用带-带隧穿热电子注入 (BBHE)进行"写"编程,采用源极Fowler-Nordheim隧穿机制进行擦除.研究显示控制栅编程电压为8V,漏极漏电流只有3μA/μm左右,注入系数为4×10-4,编程速度可达16μs,0.8μm存贮管的读电流可达60μA/μm.该新型结构具有高编程速度、低编程电压、低功耗、大读电流和高访问速度等优点.
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| 关 键 词： | 快闪存贮器 带-带隧穿 沟道热电子 Fowler-Nordheim |
A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program |
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| Pan Liyang,Zhu Jun,Liu Zhihong,Zeng Ying,Lu Yong. A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program[J]. Chinese Journal of Semiconductors, 2002, 23(7): 690-694. DOI: 10.3969/j.issn.1674-4926.2002.07.004 |
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| Authors: | Pan Liyang Zhu Jun Liu Zhihong Zeng Ying Lu Yong |
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| Abstract: | A novel band-to-band hot electron programming fl ash memory device,which features programming with high speed,low voltage,low pow er consumption,large read current and short access time,is proposed.The new memo ry cell is programmed by band-to-band tunneling induced hot-electron (BBHE) i njection method at the drain,and erased by Fowler-Nordheim tunneling through th e source region.The work shows that the programming control gate voltage can be reduced to 8V,and the drain leakage current is only 3μA/μm.Under the proposed operating conditions,the program efficiency and the read current rise up to 4× 10-4 and 60μA/μm,respectively,and the program time can be as short as 16μs. |
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| Keywords: | flash memory band to band channel hot electron Fowler Nordheim |
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