Thickness measurement of thin oxide layers in MOS capacitors |
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| Authors: | Duzelier S. Sarrabayrouse G. Prom J.L. Hollinger G. |
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| Affiliation: | Centre d'Elaboration des Mater. et d'Etudes Structurales, Toulouse, France; |
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| Abstract: | The validity of the SiO/sub 2/ layer thickness determined from capacitance-voltage measurements in MOS devices is demonstrated by comparison with results obtained by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and spectroscopic ellipsometry published elsewhere in the literature.<> |
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