| 简易化学水浴法制备SnO2/p-Si异质结光电性能 |
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| 引用本文： | 何波,徐静,宁欢颇,赵磊,邢怀中,张建成,秦玉明,张磊. 简易化学水浴法制备SnO2/p-Si异质结光电性能[J]. 红外与毫米波学报, 2017, 36(2): 139-143 |
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| 作者姓名： | 何波 徐静 宁欢颇 赵磊 邢怀中 张建成 秦玉明 张磊 |
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| 作者单位： | 东华大学 应用物理系,华东理工大学 超细材料制备与应用教育部重点实验室,上海大学分析测试中心,东华大学 应用物理系,上海大学物理系,东华大学 应用物理系,上海微伏仪器科技有限公司 |
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| 基金项目： | 上海市联盟计划项目（LM201601），超细材料制备与应用教育部重点实验室( 华东理工大学) 开放课题基金(15Q10932)，中央高校基本科研业务费（东华大学，16D110916） |
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| 摘 要： | SnO2薄膜沉积在晶硅衬底上通过一种简单化学水浴法以制备n-SnO2/p-Si异质结光电器件,该化学水浴法非常便宜和方便。采用XRD、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO2薄膜的微结构、光学和电学性能,对SnO2/p-Si异质结的I-V曲线进行测试并分析,获得明显的光电转换特性。
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| 关 键 词： | SnO2薄膜 化学水浴法 异质结 I-V曲线 |
| 收稿时间： | 2016-07-15 |
| 修稿时间： | 2016-10-29 |
Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method |
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| HE Bo,XU Jing,NING Huan-Po,ZHAO Lei,XING Huai-Zhong,ZHANG Jian-Chen,QIN Yu-Ming and ZHANG Lei. Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 139-143 |
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| Authors: | HE Bo XU Jing NING Huan-Po ZHAO Lei XING Huai-Zhong ZHANG Jian-Chen QIN Yu-Ming ZHANG Lei |
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| Affiliation: | Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,(2.The Key Laboratory for Ultrafine Materials of The Ministry of Education, East China University of Science and Technology,Instrumental Analysis and Research Center,Shanghai University,Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,Department of Physics, Shanghai University,Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,Shanghai Weifu Instrument Technology Company Limited |
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| Abstract: | The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The novel chemical bath method is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, XPS, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. Great photoelectric behavior was also obtained. |
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| Keywords: | SnO2 film, chemical bath method, heterojunction, current-voltage (I-V) characteristics |
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