Annealing effect on temperature coefficient of resistivity in La1?xSrxMnO3 ceramics |
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Authors: | Isao Kagomiya Shinji Matsumoto Ken-ichi Kakimoto Hitoshi Ohsato Hiroshi Sakai Yukinori Maeda |
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Affiliation: | 1. Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan;2. KOA Corporation, Minowa-machi, Kamiina-gun, Nagano 399-4697, Japan |
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Abstract: | We investigated annealing effects of La1?xSrxMnO3 (x = 0–0.6) on electrical resistivity and the temperature coefficient of resistivity (TCR). The annealed samples’ resistivity was lower than those of non-annealed samples. For example, annealing changed the resistivity of x = 0.3 at 25 °C from 4.50 × 10?5 to 3.71 × 10?5 Ω m. Remarkable difference in TCR was observed after annealing, for x = 0.3, 0.45, and 0.5. For x = 0.3, the TCR after annealing was 4000 ppm/°C, which was 1250 ppm/°C greater than that before annealing. We investigated (1) crystal phase, (2) Mn average valence, (3) Mott insulator–metal transition temperature, and (4) microstructure. The microstructure was remarkably varied for annealed x = 0.3 and 0.5. The average grain size of the x = 0.3 increased from 1.60 up to 2.38 μm. Results show that annealing affects resistivity and TCR because of grain growth during annealing. |
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