Infiltration mechanism of diamond/SiC composites fabricated by Si-vapor vacuum reactive infiltration process

Dense diamond/SiC composites were fabricated by Si vapor vacuum reactive infiltration of carbon-containing diamond porous preform at 1600 °C for 1 h. The microstructural evolution of the composites was investigated. The infiltration mechanisms during reactive infiltration were discussed. The composite consists of diamond, β-SiC and a small amount of Si. Epitaxial growth of nano-sized SiC on diamond and graphite surfaces occurred due to the diffusion-reaction mechanism in the initial stage of infiltration. Growth of micron-sized SiC with no preferential orientation was controlled by solution-precipitation mechanism in the final stage. The infiltration process was determined both by molecular diffusion and capillary effects. Explosive evaporation of molten Si, volume expansion of the solids and heat release during the reaction were the key factors contributing to the rapid densification of diamond/SiC composites. High thermal conductivity (580 W m^?1 K^?1) and low density (3.33 g cm^?3) of the composites were beneficial to thermal management applications.