THE STUDY OF Si(100)AND(111)SURFACES AND Ni MOLECULAR BEAM EPITAXY ON THEM BY RHEED

Clean Si(100)and(111)surfaces produced by the Ar~+ ion bombardment and high temperatureanealing techniques,and the epitaxial growth of Ni on them at room temperatue using molecular beammethod are studied by reflection high energy electron diffraction(RHEED).On the basis of experimentresults,Si(111)7×7 and its negative zone RHEED pattern,Si(100)2×1,Si(111)19~(1/2)×19~(1/2)Ni and Si(100)4×2Ni structures have been obtained,and the lattice structure of nickel silicides produced by epitaxy withlow growth rate(0.15-0.5per min)is the same as that of silicon substrate.

The study of Si (100) and (111) surfaces and Ni molecular beam epitaxy on them by rheed

 Clean Si(100)and(111)surfaces produced by the Ar+ ion bombardment and high temperature anealing techniques,and the epitaxial growth of Ni on them at room temperatue using molecular beam method are studied by reflection high energy electron diffraction(RHEED).On the basis of experiment results,Si(111)7×7 and its negative zone RHEED pattern,Si(100)2×1,Si(111)191/2×191/2Ni and Si(100) 4×2Ni structures have been obtained,and the lattice structure of nickel silicides produced by epitaxy with low growth rate(0.15-0.5per min)is the same as that of silicon substrate.