Infrared microscopy studies on high-power InGaAs-GaAs-InGaP laserswith Ga2O3 facet coatings |
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| Authors: | Passlack M. Bethea C.G. Hobson W.S. Lopata J. Schubert E.F. Zydzik G.J. Nichols D.T. de Jong J.F. Chakrabarti U.K. Dutta N.K. |
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| Affiliation: | AT&T Bell Labs., Murray Hill, NJ; |
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| Abstract: | InGaAs-GaAs separate confinement, heterostructure single quantum-well (SCH-SQW) lasers (λ=0.98 μm) with lattice-matched InGaP cladding layers, using a new Ga2O3 low reflectivity (LR) front-facet coating, are reported. The CW peak power density (17 MW/cm2) of 6 μm×750 μm ridge-waveguide lasers is limited by thermal rollover, and repeated cycling beyond thermal rollover produced no change in operating characteristics. The high-power temperature distribution along the active stripe has been measured by high-resolution infrared (3-5 μm) imaging microscopy. The temperature profile acquired for a very high optical power density PD=11 MW/cm3 was found to be uniform along the inner active laser stripe, and revealed a local temperature increase at the LR front facet ΔTf of only 9 K above the average stripe temperature ΔTs=24 K. An excellent front-facet interface recombination velocity <105 cm/s has been inferred from the measured low local temperature rise in the front facet |
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