Lateral-mode analysis of narrow-stripe semiconductor lasers with acylindrically concave end facet

A beam-propagation method is used to investigate numerically the lateral-mode characteristics of GaAlAs semiconductor lasers having a cylindrically concave facet at one end. Various degrees of index guiding have been considered. Simulations were made for both below- and above-threshold regimes. As expected, the numerical results show that the optical beam divergence parallel to the junction plane can be significantly reduced. In addition, this far-field narrowing is accompanied by lower threshold currents. However, for values of the radius of curvature of the concave facet lying in some specific ranges, the losses of the fundamental lateral mode are higher than that calculated for conventional lasers, and the corresponding eigenvalue shows nonmonotonic variations as the injection current is increased. This phenomenon is due to an enhancement of the index antiguiding over the gain-guiding mechanism